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Issue 29, 2018
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Ultrahigh energy density due to self-growing double dielectric layers at a titanium/sol–gel-derived amorphous aluminium oxide interface

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Abstract

Pursuing high-energy-density dielectric materials is desirable for the growing demands of energy storage for dielectric capacitors in modern electric power systems. Herein, a simple titanium/sol–gel-derived amorphous aluminium oxide (Ti/AmAO) film is firstly presented. The structural evolution was that double dielectric layers of a compact TiO2 layer and an Al2O3/TiOx layer self-grow simultaneously at a Ti/AmAO interface under a high electric field. The high resistivities of the TiO2 layer (an order of magnitude of 109 Ω cm) and the Al2O3/TiOx layer (an order of magnitude of 1011 Ω cm) and the improved AmAO film contribute to improving the breakdown strength, and the high dielectric constant of the TiO2 layer (up to 28.1) serves to yield a high dielectric constant. Therefore, the interfacial evolution endows the film with a high breakdown strength of up to 548 MV m−1 and a high dielectric constant of 15.9. An energy density as high as 20.9 J cm−3 at 545 MV m−1 is achieved. Meanwhile, a growth model for the compact layers is proposed to comprehensively understand the interfacial behaviour. This work extends a novel approach of introducing interfacial evolution to improve the energy storage capacity of a dielectric capacitor.

Graphical abstract: Ultrahigh energy density due to self-growing double dielectric layers at a titanium/sol–gel-derived amorphous aluminium oxide interface

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Publication details

The article was received on 24 May 2018, accepted on 02 Jul 2018 and first published on 02 Jul 2018


Article type: Paper
DOI: 10.1039/C8TC02524J
Citation: J. Mater. Chem. C, 2018,6, 7920-7928
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    Ultrahigh energy density due to self-growing double dielectric layers at a titanium/sol–gel-derived amorphous aluminium oxide interface

    Z. Su, M. Yao and X. Yao, J. Mater. Chem. C, 2018, 6, 7920
    DOI: 10.1039/C8TC02524J

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