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Organosilicon dimer of BTBT as a perspective semiconductor material for toxic gas detection with monolayer organic field-effect transistor

Abstract

Monolayer organic field effect transistors (OFETs) provide opportunity for ultrahigh sensitivity gas sensor applications due to a strong dependence of OFET key parameters on the environment. However, an impressive combination of both high sensitivity and instantaneous response of such gas sensor can be achieved only on low-defect dense monolayer with high electrical performance. Herein, we investigated monolayer thin film formation of recently developed benzothieno[3,2-b][1]benzothiophene (BTBT) organosilicon dimer D2-Und-BTBT-Hex by Langmuir-Blodgett, Langmuir-Schaefer and spin-coating methods. For all these techniques, the conditions of uniform low-defect monolayer formation were found. These monolayers were used for preparation of OFET devices, which demonstrated excellent electrical performance with the hole mobility up to 7×10-2 cm2V-1s-1, the threshold voltage around 0 V and on-off ratio of 105 as well as long-term stability of a half-year storage under ambient conditions. Preliminary investigations demonstrated the OFETs instantaneous response on ammonia at low concentrations (down to 400 ppb). These findings show a great potential of BTBT-based OFETs for large-area sensing devices application.

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Publication details

The article was received on 20 May 2018, accepted on 29 Jul 2018 and first published on 31 Jul 2018


Article type: Paper
DOI: 10.1039/C8TC02447B
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Organosilicon dimer of BTBT as a perspective semiconductor material for toxic gas detection with monolayer organic field-effect transistor

    A. A. Trul, A. Sizov, V. Chekusova, O. Borshchev, E. Agina, M. А. Shcherbina, A. V. Bakirov, S. N. Chvalun and S. Ponomarenko, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC02447B

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