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Issue 29, 2018
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Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

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Abstract

The inherently rapid ligand substitution kinetics associated with the novel and chemically compatible precursors, [MCl3(EnBu2)3] (M = Sb, Bi; E = Se, Te), enable CVD growth of ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films with very good compositional, structural and morphological control, for the first time. X-ray diffraction data follow Vegard's law and Raman bands shift linearly with the atom substitutions, indicating very well-distributed solid solutions.

Graphical abstract: Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

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Publication details

The article was received on 16 Mar 2018, accepted on 04 Jun 2018 and first published on 12 Jul 2018


Article type: Communication
DOI: 10.1039/C8TC01285G
Citation: J. Mater. Chem. C, 2018,6, 7734-7739
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    Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

    S. L. Benjamin, C. H. (. de Groot, C. Gurnani, S. L. Hawken, A. L. Hector, R. Huang, M. Jura, W. Levason, E. Reid, G. Reid, S. P. Richards and G. B. G. Stenning, J. Mater. Chem. C, 2018, 6, 7734
    DOI: 10.1039/C8TC01285G

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