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Issue 29, 2018
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Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

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Abstract

The inherently rapid ligand substitution kinetics associated with the novel and chemically compatible precursors, [MCl3(EnBu2)3] (M = Sb, Bi; E = Se, Te), enable CVD growth of ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films with very good compositional, structural and morphological control, for the first time. X-ray diffraction data follow Vegard's law and Raman bands shift linearly with the atom substitutions, indicating very well-distributed solid solutions.

Graphical abstract: Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

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Supplementary files

Article information


Submitted
16 Mar 2018
Accepted
04 Jun 2018
First published
12 Jul 2018

This article is Open Access

J. Mater. Chem. C, 2018,6, 7734-7739
Article type
Communication

Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

S. L. Benjamin, C. H. (. de Groot, C. Gurnani, S. L. Hawken, A. L. Hector, R. Huang, M. Jura, W. Levason, E. Reid, G. Reid, S. P. Richards and G. B. G. Stenning, J. Mater. Chem. C, 2018, 6, 7734
DOI: 10.1039/C8TC01285G

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