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Issue 23, 2018
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Tris(ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cells

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Abstract

Owing hysteresis free characteristics and good reproducibility, inverted p-i-n perovskite solar cells (PSC) are gaining large interest in the photovoltaic field. In this context, the need for stable materials calls for the development of robust transporting layers compatible with the fabrication processes of the solar cell. In this study, we introduce a new precursor, tris(ethylene diamine) nickel acetate, for low temperature (280–300 °C) deposition of NiO hole transporting layer. Full characterization of the deposited NiO film layer was performed through XRD, Raman and Auger spectroscopy. We found a direct correlation between device performance and NiO thickness with maximum efficiency exceeding 15% for the thin NiO (10 nm) layer.

Graphical abstract: Tris(ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cells

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Supplementary files

Article information


Submitted
09 Mar 2018
Accepted
11 May 2018
First published
12 May 2018

J. Mater. Chem. C, 2018,6, 6179-6186
Article type
Paper

Tris(ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cells

D. S. Saranin, V. N. Mazov, L. O. Luchnikov, D. A. Lypenko, P. A. Gostishev, D. S. Muratov, D. A. Podgorny, D. M. Migunov, S. I. Didenko, M. N. Orlova, D. V. Kuznetsov, A. R. Tameev and A. Di Carlo, J. Mater. Chem. C, 2018, 6, 6179
DOI: 10.1039/C8TC01169A

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