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Issue 24, 2018
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Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

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Abstract

In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD). III-Nitride HNCs have been characterized for their structural, chemical, surface, and optical properties. The material properties of nanostructured III-nitride materials have been compared with the thin-film counterparts which were also grown using PA-ALD. Our results revealed that long-range ordered arrays of III nitride HNCs were successfully integrated on Si substrates and possess hexagonal polycrystalline wurtzite crystalline structure. Such long-range ordered wafer-scale III-nitride nanostructures might be potentially used in piezotronic sensing, energy harvesting, resistive memory, flexible and wearable electronics, III-nitride photovoltaics, and (photo)catalysis.

Graphical abstract: Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

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Supplementary files

Article information


Submitted
09 Mar 2018
Accepted
18 May 2018
First published
21 May 2018

J. Mater. Chem. C, 2018,6, 6471-6482
Article type
Paper

Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

A. Haider, P. Deminskyi, M. Yilmaz, K. Elmabruk, I. Yilmaz and N. Biyikli, J. Mater. Chem. C, 2018, 6, 6471
DOI: 10.1039/C8TC01165F

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