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Robust Two-Dimensional Bipolar Magnetic Semiconductors by Defect Engineering

Abstract

Bipolar magnetic semiconductors (BMS) are promising for applications in spintronic devices and quantum computers as 100% spin polarized currents with reversible spin direction can be easily controlled by a gate voltage in such materials. Herein, we perform first-principles calculations to investigate the structural and electronic properties of intrinsic defects in monolayer half-semiconductor CrSiTe3. Our calculations show that CrSi or SiCr antisite defects which are thermodynamically dominating in CrSiTe3 can trigger the bipolar magnetic property in CrSiTe3. These BMS characters are robust and surviving under a large applied external biaxial tensile strain and electric field. Our results demonstrate a new path to design BMS materials by defect engineering, promoting the applications of two-dimensional magnetic materials in spintronics.

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Publication details

The article was received on 30 Jan 2018, accepted on 09 Jul 2018 and first published on 12 Jul 2018


Article type: Paper
DOI: 10.1039/C8TC00507A
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Robust Two-Dimensional Bipolar Magnetic Semiconductors by Defect Engineering

    H. Cheng, J. Zhou, M. Yang, L. Shen, J. Linghu, Q. Wu, P. Qian and Y. P. Feng, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC00507A

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