Issue 3, 2018

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Abstract

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD). The films were fully characterised by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The optoelectronic properties of the films were determined using UV/vis spectroscopy and Hall effect measurements. The AGZO film displayed the lowest resistivity (1.3 × 10−2 Ω cm) and highest carrier mobility (7.9 cm2 V−1 s−1), due the relatively low amount of disorder in the structure. The incorporation of In3+ resulted in the most disorder in the structure due to its large radius, which led to an increase in optical absorption, and a decrease in resistivity.

Graphical abstract: Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Article information

Article type
Paper
Submitted
01 Sep 2017
Accepted
07 Nov 2017
First published
04 Jan 2018
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2018,6, 588-597

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

D. B. Potter, M. J. Powell, I. P. Parkin and C. J. Carmalt, J. Mater. Chem. C, 2018, 6, 588 DOI: 10.1039/C7TC04003B

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