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Simultaneous regulation of electrical and thermal transport properties in MnTe chalcogenides via the incorporation of p-type Sb2Te3

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Abstract

It is reported that MnTe doped with p-type Sb2Te3 shows an encouraging thermoelectric performance at elevated temperatures as in MnTe + x at% Sb2Te3 samples (x = 0, 0.5, 1, 1.5, 2) samples. After simultaneous introduction of holes, the Fermi level of MnTe shifts toward the valence band, which resulting the improved electrical performance. Whereas the dispersed Sb2Te3 nano-scale precipitates cooperates the deterioration of lattice thermal conductivities via phonon scattering centers, such as edge dislocations and large angle grain boundaries. Consequently, a maximum ZT of 1.2 at 873 K has been achieved for 1.5 at% Sb2Te3 doped MnTe sample which increases by 77% in comparison with the un-doped sample.

Graphical abstract: Simultaneous regulation of electrical and thermal transport properties in MnTe chalcogenides via the incorporation of p-type Sb2Te3

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Publication details

The article was received on 11 Sep 2018, accepted on 26 Oct 2018 and first published on 30 Oct 2018


Article type: Paper
DOI: 10.1039/C8TA08830F
Citation: J. Mater. Chem. A, 2018, Advance Article
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    Simultaneous regulation of electrical and thermal transport properties in MnTe chalcogenides via the incorporation of p-type Sb2Te3

    A. Basit, J. Yang, Q. Jiang, J. Xin, X. Li, S. Li, S. Li and Q. Long, J. Mater. Chem. A, 2018, Advance Article , DOI: 10.1039/C8TA08830F

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