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Incorporating deep electron traps into perovskite devices: towards high efficiency solar cells and fast photodetectors

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Abstract

Compared with the charge recombination loss from the unfavorable defects of the perovskite layer, the inferior charge transport characteristics of the interlayers deteriorate the efficiency in solar cells and slow the response speed in photodetectors. Here, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) is incorporated into a 4,4′,4′′-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) layer to facilitate hole transport by providing deep electron traps. The increased work function and enlarged hole mobility of the composite hole transport layer are beneficial for the photoelectric conversion process of the perovskite photovoltaic devices. Consequently, an enhanced efficiency of 18.35% is achieved for the perovskite solar cells and a shortened decay time of 39.8 ns is obtained for the perovskite photodetectors. This work reveals the limitation of the transport layers on the perovskite solar cells and photodetectors, and provides an effective method to obtain high efficiency solar cells and fast photodetectors.

Graphical abstract: Incorporating deep electron traps into perovskite devices: towards high efficiency solar cells and fast photodetectors

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Publication details

The article was received on 01 Sep 2018, accepted on 02 Oct 2018 and first published on 02 Oct 2018


Article type: Paper
DOI: 10.1039/C8TA08499H
Citation: J. Mater. Chem. A, 2018, Advance Article
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    Incorporating deep electron traps into perovskite devices: towards high efficiency solar cells and fast photodetectors

    D. Zhang, C. Liu, Z. Li, X. Zhang, X. Zhang, S. Ruan, X. Zhang and W. Guo, J. Mater. Chem. A, 2018, Advance Article , DOI: 10.1039/C8TA08499H

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