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Enhancing Thermoelectric Performance for ZnO Epitaxial Films by Ga Doping and Thermal Tuning

Abstract

With good chemical and thermal stabilities, ZnO is a promising thermoelectric material used for a wide temperature range, especially for high temperature. For two dimensional (2D) thin films, modifying the thermal and electrical transport properties could be simplified due to the loss of one dimension, yet the carrier transport properties of pure ZnO have not been optimized. Herein, highly c-axis orientated Ga-doped thin films have been epitaxially deposited at different temperatures, and the surface morphology and roughness have been modified. The GZO film deposited at 673 K has exhibited an increased Hall mobility due to the good quality and crystallinity, further with a higher carrier concentration by enhancing the Ga doping efficiency on Zn sites, making the electrical conductivity remarkable. In addition, the enlarged effective mass which could be mainly attributed to the enhancements of density of states makes the Seebeck coefficient value of GZO-673-AO remain a high level upon increasing the carrier concentration. Ultimately, an improved power factor value of 256 μW m−1 K−2 at 623 K has been achieved for GZO-673-AO, demonstrating that Ga doping combined with optimizing depositing temperature could be a promising strategy for enhancing the thermoelectric properties of ZnO-based epitaxial films.

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Publication details

The article was received on 15 Jul 2018, accepted on 09 Sep 2018 and first published on 12 Sep 2018


Article type: Paper
DOI: 10.1039/C8TA06824K
Citation: J. Mater. Chem. A, 2018, Accepted Manuscript
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    Enhancing Thermoelectric Performance for ZnO Epitaxial Films by Ga Doping and Thermal Tuning

    Z. Zhou, G. Ren, X. Tan, R. Liu, C. Liu, Y. H. Lin and C. Nan, J. Mater. Chem. A, 2018, Accepted Manuscript , DOI: 10.1039/C8TA06824K

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