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Effect of Sn element on optimizing thermoelectric performance of Te nanowires

Abstract

Metal doping for inorganic materials has been considered as one of effective methods to improve their thermoelectric (TE) performance. Many efforts focus on the low-dimensional tellurium nanowires (Te NWs). Owing to its poor environmental stability and electrical conductivity, the optimization of TE performance for Te nanomaterials by metal-doping have gained great attention. In this work, tin (Sn) as the typical non-lead metal element was employed as a doping element to improve the TE performance of Te NWs. The influence of Sn element on the TE performance of Te NWs were systematically investigated with different Sn contents. When the atom ratio of Sn/Te was 0.125, the electrical conductivity of SnTe NW films achieved the maximum value close to 600 S cm-1 after annealing with a high Seebeck coefficient of 400 μV K-1. The Sn-doped Te NW (Sn0.125Te) film presented a high power factor of 114.6 μW m-1 K-2, which was about two orders of magnitude higher than the pure Te NW film. We confirm that the Sn-doping is an effective way for improving the TE performance of Te NWs.

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Publication details

The article was received on 22 Jun 2018, accepted on 06 Sep 2018 and first published on 06 Sep 2018


Article type: Paper
DOI: 10.1039/C8SE00297E
Citation: Sustainable Energy Fuels, 2018, Accepted Manuscript
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    Effect of Sn element on optimizing thermoelectric performance of Te nanowires

    P. Sun, C. Li, J. Xu, Q. Jiang, W. Wang, J. Liu, F. Zhao, Y. Ding, J. Hou and F. Jiang, Sustainable Energy Fuels, 2018, Accepted Manuscript , DOI: 10.1039/C8SE00297E

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