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Issue 62, 2018, Issue in Progress
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Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers

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Abstract

A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed via simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a single EBL (S-EBL), graded EBL (G-EBL), and GSL-EBL. The variation in the energy band diagram around the EBL region indicates that the introduction of GSL-EBL is very effective in enhancing carrier injection. Besides, all DUV-LEDs emitting at 280 nm are grown in the high temperature metal organic chemical deposition system. It is confirmed that the optical power of the DUV-LED with the GSL-EBL is significantly higher than that of the DUV-LED with the S-EBL and G-EBL.

Graphical abstract: Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers

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Article information


Submitted
21 Aug 2018
Accepted
09 Oct 2018
First published
16 Oct 2018

This article is Open Access

RSC Adv., 2018,8, 35528-35533
Article type
Paper

Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers

B. So, J. Kim, T. Kwak, T. Kim, J. Lee, U. Choi and O. Nam, RSC Adv., 2018, 8, 35528
DOI: 10.1039/C8RA06982D

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