Epitaxial growth and interfacial property of monolayer MoS2 on gallium nitride

Abstract

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) on semiconductor substrates are important for next-generation electronics and optoelectronics. In this study, we demonstrate the growth of monolayer MoS₂ on a lattice-matched gallium nitride (GaN) semiconductor substrate by chemical vapor deposition (CVD). The monolayer MoS₂ triangles exhibit optical properties similar to that of typical single-crystal MoS₂ sheets, as verified by the Raman, photoluminescence, and morphological characterizations. The Raman and PL features and their intensity mappings suggest that the as-grown MoS₂ on GaN substrate can achieve high quality and uniformity, demonstrating that GaN substrate is favorable for 2D MoS₂ growth. Moreover, the interfacial property and stacking structure were investigated by first-principles density functional theory (DFT) calculations to confirm the interlayer interactions of monolayer MoS₂ on GaN. Accordingly, the ability to grow high quality monolayer MoS₂ on semiconductor GaN substrate would open a new route toward the synthesis of hetero and composite structures for promising electronic and optoelectronic device applications.