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Issue 44, 2018, Issue in Progress
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Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

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Abstract

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm). Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good characteristics with a high saturation mobility of 15.1 cm2 V−1 s−1 and low sub-threshold swing of 0.12 V dec−1. Excellent positive and negative bias stress stabilities were also obtained. When positive bias temperature stress (PBTS) stability was tested from 40 to 80 °C for 104 s, the threshold voltages (VTH) of the device using the 6 nm-thick IGZO channel shifted negatively, and the VTH shifts increased from −0.5 to −6.9 V with the increasing temperature. Time-dependent PBTS instabilities could be explained by a stretched-exponential equation, representing a charge-trapping mechanism.

Graphical abstract: Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

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Publication details

The article was received on 27 Apr 2018, accepted on 26 Jun 2018 and first published on 11 Jul 2018


Article type: Paper
DOI: 10.1039/C8RA03639J
RSC Adv., 2018,8, 25014-25020
  • Open access: Creative Commons BY-NC license
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    Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

    S. Yoon, N. Seong, K. Choi, W. Shin and S. Yoon, RSC Adv., 2018, 8, 25014
    DOI: 10.1039/C8RA03639J

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