Issue 4, 2018, Issue in Progress
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RSC Advances

Controlled synthesis of Cu nanoparticle arrays with surface enhanced Raman scattering effect performance†

Qianqian Ding,‡a   Lifeng Hang‡b  and  Liang Ma ORCID logo *b  

* Corresponding authors

a Department of Precision Manufacturing Engineering, Suzhou Vocational Institute of Industrial Technology, Suzhou 215104, China

b Department of Polymer Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, P. R. China
E-mail: maliangs@mail.ustc.edu.cn

Abstract

Herein, we report the synthesis of a 350 nm Cu nanoparticle array with different period combinations by a method based on a monolayer and have further investigated its surface-enhanced Raman scattering (SERS) properties experimentally. The SERS properties of the 350 nm Cu nanoparticle array were investigated, and the influence of the thickness of the Cu nanoshell was studied. The results demonstrated that the 18 min ion-sputtering deposition can improve the SERS activity in addition to good stability. This study can provide an optimized method for some inexpensive nanomaterials as highly active SERS substrates and a good solution to the interference caused by substrate impurity.

Graphical abstract: Controlled synthesis of Cu nanoparticle arrays with surface enhanced Raman scattering effect performance

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Article information

DOI
https://doi.org/10.1039/C7RA10694G
Article type
Paper
Submitted
27 Sep 2017
Accepted
21 Dec 2017
First published
08 Jan 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 1753-1757

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Controlled synthesis of Cu nanoparticle arrays with surface enhanced Raman scattering effect performance

Q. Ding, L. Hang and L. Ma, RSC Adv., 2018, 8, 1753 DOI: 10.1039/C7RA10694G

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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