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Issue 2, 2018
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PbI2 band gap engineering by gel incorporation

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Incorporation of guest materials into semiconducting single crystalline hosts leads to the formation of semiconducting single-crystal composites. However, limited efforts have been made to comprehensively investigate the property of these potential functionalized single-crystal composites. Herein, PbI2/gel single-crystal composites have been successfully prepared. Diffuse reflectance spectra show a clear increase in the band gap of PbI2 after gel incorporation. The band gap is further increased through expanding the area of host/guest interfaces or enhancing the interatomic forces at the interfaces. The interatomic forces (electrostatic interaction) at the host/guest interfaces are attributed to this band gap shift. As such, this study provides a novel and facile way for band gap engineering by gel incorporation.

Graphical abstract: PbI2 band gap engineering by gel incorporation

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The article was received on 05 Nov 2017, accepted on 14 Dec 2017 and first published on 15 Dec 2017

Article type: Research Article
DOI: 10.1039/C7QM00509A
Mater. Chem. Front., 2018,2, 362-368

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    PbI2 band gap engineering by gel incorporation

    C. Hu, T. Ye, Y. Liu, J. Ren, X. Jin, H. Chen and H. Li, Mater. Chem. Front., 2018, 2, 362
    DOI: 10.1039/C7QM00509A

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