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High-Performance Sub-10 nm Monolayer Bi2O2Se Transistors

Abstract

A successful two-dimensional (2D) semiconductor successor of silicon as high-performance logic in post-silicon era should have both excellent performance and air stability. However, air-stable 2D semiconductor with high performance is quite elusive until air-stable Bi2O2Se with high electron mobility is fabricated very recently (Nature Nanotechnology 12, 530 (2017)). Herein, we predict the performance limit of the monolayer (ML) Bi2O2Se metal oxide semiconductor FETs (MOSFETs) by using the ab initio quantum transport simulation at the sub-10-nm gate length. The on-current, delay time, and power-delay product of the optimized n- and p-type ML Bi2O2Se MOSFETs can reach or nearly reach the high performance requirements of the International Technology Roadmap for Semiconductors (ITRS) until the gate length is scaled down to 2 and 3 nm, respectively. The large on-currents of the n- and p-type ML Bi2O2Se MOSFETs are attributed to either the large effective carrier velocity (n-type) or the large density of states near the valence band maximum and special shape of the band structure (p-type). A new avenue is thus opened to continue Moore’s law down to 2–3 nm by utilizing ML Bi2O2Se as the channel.

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Publication details

The article was received on 02 Nov 2018, accepted on 01 Dec 2018 and first published on 03 Dec 2018


Article type: Paper
DOI: 10.1039/C8NR08852G
Citation: Nanoscale, 2018, Accepted Manuscript
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    High-Performance Sub-10 nm Monolayer Bi2O2Se Transistors

    R. Quhe, J. Liu, J. Wu, J. Yang, Y. Wang, Q. Li, T. Li, Y. guo, J. Yang, H. Peng, M. Lei and J. Lu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR08852G

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