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Modulated Interlayer Charge Transfer dynamics in Monolayer TMD/Metal Junction

Abstract

Abstract: The performance of optoelectronic devices based on monolayer transition-metal dichalcogenide (mTMD) semiconductors is significantly affected by the contact at the mTMD-metal interface, which is dependent upon interlayer interactions and coupling. Here, we report a systematic optical method to investigate the interlayer charge transfer and coupling in a mTMD-metal heterojunction. Giant photoluminescence (PL) quenching was observed in a monolayer MoS2/Pd (1L MoS2/Pd) junction which is mainly due to the efficient interlayer charge transfer between Pd and MoS2. The 1L MoS2/Pd also exhibits an increasing PL quenching factor (ƞ) as the temperature decreases, due to a reduction of the interlayer spacing. Annealing experiments were also performed which supported interlayer charge transfer as the main mechanism for the increase of ƞ. Moreover, a monolayer MoS2/Au (1L MoS2/Au) junction was fabricated for engineering the interlayer charge transfer. Interestingly, a narrowing effect of the full width at half maximum (FWHM) was encountered as the junctions change from 1L MoS2/SiO2 → 1L MoS2/Au → 1L MoS2/Pd, possibly originating from a change of doping level induced weakening of exciton-carrier scattering. Our results deepen the understanding of metal-semiconductor junctions for further exploring fundamental phenomena and enabling high-performance devices using mTMD-metal junctions.

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Supplementary files

Publication details

The article was received on 30 Oct 2018, accepted on 26 Nov 2018 and first published on 28 Nov 2018


Article type: Communication
DOI: 10.1039/C8NR08728H
Citation: Nanoscale, 2018, Accepted Manuscript
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    Modulated Interlayer Charge Transfer dynamics in Monolayer TMD/Metal Junction

    L. Zhang, H. Yan, X. Sun, M. Dong, T. Yildirim, B. Wang, B. Wen, G. Neupane, A. Sharma, Y. Zhu, J. Zhang, K. Liang, B. Liu, H. Nguyen, D. Macdonald and Y. Lu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR08728H

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