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Janus Monolayer of WSeTe, A New Structural Phase Transition Material Driven by Electrostatic Gating

Abstract

Phase transition materials are widely exploited in sensors, switches, and information storage. However, the dynamic control of structural phase transitions in low-dimensional materials is rarely reported, except for the recent demonstration of semiconductor-semimetal transition in monolayer MoTe2 modulated by electrostatic gating. Here, based on density functional theory calculations we screen in the Janus family of transition metal dichalcogenides, MXY where M = Mo or W, X/Y = S, Se, or Te, for new two-dimensional phase transition materials. We find that Janus monolayer of WSeTe undergoes reversible phase transitions modulated by electrostatic gating, owing to the small energy difference between H and T’ phases, ET’- EH = 48 meV. The gate voltage of 2.0 V (with high dielectric gating the injected charge is ~ 1013/cm2) is required to trigger the semiconductor-semimetal transition in WSeTe. The kinetic barrier for both forward and backward phase transitions is ~ 0.66 eV, which is significantly lower than that in MoTe2, leading to three orders of magnitude increase in the transition rate and much more rapid response of devices.

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Publication details

The article was received on 09 Oct 2018, accepted on 03 Nov 2018 and first published on 05 Nov 2018


Article type: Communication
DOI: 10.1039/C8NR08151D
Citation: Nanoscale, 2018, Accepted Manuscript
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    Janus Monolayer of WSeTe, A New Structural Phase Transition Material Driven by Electrostatic Gating

    Y. Sun, Z. Shuai and D. Wang, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR08151D

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