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Charge governed phase manipulation of tellurium few-layers

Abstract

Few-layer Tellurium is an emerging quasi-one-dimensional layered material. It is a striking feature that Te has various few-layer allotropes (α – δ). Although these allotropes offer substantially different physical properties, only the α phase has been synthesized in neutral few-layers as it is, so far, the most stable few-layer form. Here, we show the use of hole- or electron-doping could maintain a certain Te phase. The β, α, γ and δ phases appear as the most stable form of a Te bilayer in sequence, respectively, with bandgap variations over 1 eV. In Te tri-layers, a novel metallic chiral α+δ phase emerges, leading to the appearance of chirality. Transitions among these phases, understood at the wavefunction level, are accompanied by the emergence or elimination of inversion centers (α-β, α-γ, α-α+δ), structural anisotropy (α-γ, γ-δ) and chirality (α-α+δ), which could result in substantial changes in optical and other properties. In light of this, this work opens a new avenue for stabilizing different allotropes of layered materials; this is crucial for using their striking properties. It also suggests the possibility toward building mono-elemental electronic and optoelectronic heterostructures or devices, which sounds attractive for future electronics.

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Publication details

The article was received on 14 Sep 2018, accepted on 05 Nov 2018 and first published on 06 Nov 2018


Article type: Paper
DOI: 10.1039/C8NR07501H
Citation: Nanoscale, 2018, Accepted Manuscript
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    Charge governed phase manipulation of tellurium few-layers

    C. Wang, X. Zhou, J. Qiao, L. Zhou, X. KONG, Y. Pan, Z. Cheng, Y. Chai and W. Ji, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR07501H

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