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Issue 47, 2018
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Charge-governed phase manipulation of few-layer tellurium

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Few-layer tellurium is an emerging quasi-one-dimensional layered material. The striking feature of Te is its presence as various few-layer allotropes (α–δ). Although these allotropes offer substantially different physical properties, only the α phase has been synthesized in neutral few-layers as it is so far the most stable few-layer form. Herein, we show that hole or electron doping could maintain a certain Te phase. The β, α, γ and δ phases appear as the most stable forms of Te bilayer, in sequence, with bandgap variations over 1 eV. In Te trilayer, a novel metallic chiral α + δ phase emerges, leading to the appearance of chirality. Transitions among these phases, understood at the wavefunction level, are accompanied by the emergence or elimination of inversion centers (α–β, α–γ, α–α + δ), structural anisotropy (α–γ, γ–δ) and chirality (α–α + δ), which could result in substantial changes in optical and other properties. In light of these findings, our work opens a new avenue for stabilizing different allotropes of layered materials; this is crucial for using their outstanding properties. This study also suggests the possibility of building mono-elemental electronic and optoelectronic heterostructures or devices, which are attractive for future applications in electronics.

Graphical abstract: Charge-governed phase manipulation of few-layer tellurium

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Publication details

The article was received on 14 Sep 2018, accepted on 05 Nov 2018 and first published on 06 Nov 2018

Article type: Paper
DOI: 10.1039/C8NR07501H
Citation: Nanoscale, 2018,10, 22263-22269

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    Charge-governed phase manipulation of few-layer tellurium

    C. Wang, X. Zhou, J. Qiao, L. Zhou, X. Kong, Y. Pan, Z. Cheng, Y. Chai and W. Ji, Nanoscale, 2018, 10, 22263
    DOI: 10.1039/C8NR07501H

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