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Enhanced SiV photoluminescence by oxidation induced nano-structures on diamond particle surface

Abstract

We have successfully constructed nanostructures on the surface of diamond particles by oxidation, which dramatically enhances their silicon-vacancy (SiV) photoluminescence (PL) intensity. The {100} plane initially has a smooth surface and stronger anti-oxidation ability, and it appears a nano-pyramid structure with the sides of close {111} crystal plane orientation after oxidation. The {111} plane originally presents the vertically layered or scale-like structures, and exhibits irregular nano-porous which have some ridges perpendicular to the {111} plane in the edge area after oxidation. Since the crystal orientation of these nano-structures matches the <111> aligned split-vacancy structure of SiV center, the collection efficiency of SiV luminescence can be increased, so the SiV emission intensity increases by 27-fold and 4-fold for nano-pyramid and irregular nano-porous structure, respectively. Oxidation can also significantly improve the crystal quality of diamond, so that the lattice stress around the SiV color center is reduced, narrowing the linewidth of the SiV PL peak to near 3 nm. This provides a feasible way to optimize SiV photoluminescent properties by building nanostructures on the surface of diamond particles.

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Publication details

The article was received on 10 Sep 2018, accepted on 04 Dec 2018 and first published on 05 Dec 2018


Article type: Paper
DOI: 10.1039/C8NR07354F
Citation: Nanoscale, 2018, Accepted Manuscript
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    Enhanced SiV photoluminescence by oxidation induced nano-structures on diamond particle surface

    Y. Mei, C. Chen, D. Fan, M. Jiang, X. Li and X. J. Hu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR07354F

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