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Crystallographic Plane and Topography Dependent Growth for Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

Abstract

A low-cost, high-efficiency, and catalyst-free method for fabricating well-aligned and uniform semipolar InGaN nanorods (NRs) by molecular beam epitaxy (MBE) is proposed using optimized patterned sapphire substrate (PSS) with high Miller index crystallographic planes. The dense, obliquely aligned, and high-quality semipolar (1-102) InGaN NRs are fabricated on hexagonal pyramid arrays of PSS for the first time in this work. A unique semipolar (1-102) and polar (0001) InGaN NR array composite structure is thus achieved on hexagonal pyramid PSS. The connected, uniform, and obliquely aligned NRs are formed on PSS with cylinder arrays. Cylinder and hexagonal pyramid arrays on PSSs are structured by standard photolithography process and etching techniques. Both pattern topography and crystallographic plane of PSS significantly affect the morphology, dimension, and crystallographic orientation of InGaN NRs. It is clearly demonstrated that PSS exposed with high Miller index crystallographic planes with well-organized step-terrace structures, facilitates growing ordered and dense semipolar InGaN NRs. This work contributes to thoroughly understanding nucleation and growth mechanisms of InGaN NRs on high Miller index plane of PSS with different topography, as well as controllably fabricating dense and uniform semipolar NRs, thus facilitating the fabrication of NR-based optoelectronic device with enhanced performance.

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Publication details

The article was received on 08 Sep 2018, accepted on 28 Oct 2018 and first published on 01 Nov 2018


Article type: Paper
DOI: 10.1039/C8NR07307D
Citation: Nanoscale, 2018, Accepted Manuscript
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    Crystallographic Plane and Topography Dependent Growth for Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

    J. Shen, Y. Zheng, Z. Xu, Y. Yu, F. Gao, S. Zhang, Y. Gan and G. Li, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR07307D

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