Jump to main content
Jump to site search

Photovoltaic Effect in Few-Layer ReS2/WSe2 Heterostructure


Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgap. Because of their unique advantages, TMDC p-n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. The few-layer ReS2/WSe2 heterostructure exhibits a p-n junction and an n-n junction in different gate-bias regime. In the p-n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms—direct tunneling, Fowler-Nordheim tunneling, and the space charge region—depending on the drain bias. Furthermore, the photovoltaic effect is observed in the few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (≈ 0.56), power conversion (≈ 1.5%), and external quantum efficiency (≈ 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices.

Back to tab navigation

Supplementary files

Publication details

The article was received on 05 Sep 2018, accepted on 08 Oct 2018 and first published on 09 Oct 2018

Article type: Paper
DOI: 10.1039/C8NR07219A
Citation: Nanoscale, 2018, Accepted Manuscript
  •   Request permissions

    Photovoltaic Effect in Few-Layer ReS2/WSe2 Heterostructure

    C. Park, T. N. Duong, S. Bang, A. N. Duc, H. Oh and M. S. Jeong, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR07219A

Search articles by author