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Photovoltaic Effect in Few-Layer ReS2/WSe2 Heterostructure

Abstract

Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgap. Because of their unique advantages, TMDC p-n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. The few-layer ReS2/WSe2 heterostructure exhibits a p-n junction and an n-n junction in different gate-bias regime. In the p-n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms—direct tunneling, Fowler-Nordheim tunneling, and the space charge region—depending on the drain bias. Furthermore, the photovoltaic effect is observed in the few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (≈ 0.56), power conversion (≈ 1.5%), and external quantum efficiency (≈ 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices.

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Supplementary files

Publication details

The article was received on 05 Sep 2018, accepted on 08 Oct 2018 and first published on 09 Oct 2018


Article type: Paper
DOI: 10.1039/C8NR07219A
Citation: Nanoscale, 2018, Accepted Manuscript
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    Photovoltaic Effect in Few-Layer ReS2/WSe2 Heterostructure

    C. Park, T. N. Duong, S. Bang, A. N. Duc, H. Oh and M. S. Jeong, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR07219A

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