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Synergistic doping effects of ZnO:N/BiVO4:Mo bunched nanorod array photoanode for enhancing charge transfer and carrier density in photoelectrochemical systems

Abstract

One-dimensional heterojunction nanorods are highly attractive as photoanodes for developing efficient photoelectrochemical (PEC) systems for the effective photogeneration of charge carriers and transport. ZnO/BiVO4 nanorod arrays (NRAs) are excellent candidates if their charge transferring and recombination issues can be improved. In the current work, we have studied the synergistic doping effects of N-doped ZnO/Mo-doped BiVO4 NRAs arrays for enhancing photoanode activity in PEC devices. The N-doping of ZnO NRs enhances charge carrier density by ~3-fold over undoped ZnO NRs through increased oxygen vacancies induced from N dopants. The Mo dopants in BiVO4 improve the mobility of photogenerated charge carriers and contribute to reducing charge recombination. The synergistic doping effects of both ZnO and BiVO4 could increase the charge transfer rate constant (kct) of the ZnO:N/BiVO4:Mo heterojunction by ~40 % and decrease the charge transfer resistance by ~1.9-fold compared to those of undoped ZnO/BiVO4, which were confirmed by time resolved photoluminescence (PL) and electrochemical impedance (EIS) analysis. Our optimally fabricated ZnO:N/BiVO4:Mo NRAs photoanode could achieve an excellent photocurrent of 3.62 mA/cm2 without application of any co-catalysts. This work presents a useful strategy for designing efficient heterojunction photoanodes in PEC systems.

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Publication details

The article was received on 16 Aug 2018, accepted on 02 Oct 2018 and first published on 03 Oct 2018


Article type: Paper
DOI: 10.1039/C8NR06630B
Citation: Nanoscale, 2018, Accepted Manuscript
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    Synergistic doping effects of ZnO:N/BiVO4:Mo bunched nanorod array photoanode for enhancing charge transfer and carrier density in photoelectrochemical systems

    D. Kim, Z. Zhang and K. Yong, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR06630B

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