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Issue 44, 2018
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Solution-phase synthesized iron telluride nanostructures with controllable thermally triggered p-type to n-type transition

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Abstract

The switchability of electrical properties has recently attracted much attention due to its potential applications in memory, sensors, and resistive switches. Here, a solution-phase synthesis of iron telluride nanostructures with reversible and reproducible switching behavior between p- and n-type conduction is demonstrated by a simple change of temperature without crystal structure changes. The transition temperature of FeTe2 to switch from p-type to n-type is strongly dependent on the original ratio of the precursors and sintering time. Further studies confirm that the switching is derived from the valence change effect and a proof-of-concept thermally triggered p–n diode has been demonstrated.

Graphical abstract: Solution-phase synthesized iron telluride nanostructures with controllable thermally triggered p-type to n-type transition

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Publication details

The article was received on 09 Aug 2018, accepted on 12 Oct 2018 and first published on 15 Oct 2018


Article type: Paper
DOI: 10.1039/C8NR06418K
Citation: Nanoscale, 2018,10, 20664-20670

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    Solution-phase synthesized iron telluride nanostructures with controllable thermally triggered p-type to n-type transition

    W. Zheng, S. Hong, B. Min and Y. Wu, Nanoscale, 2018, 10, 20664
    DOI: 10.1039/C8NR06418K

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