Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 27th March 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 47, 2018
Previous Article Next Article

Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation

Author affiliations

Abstract

Remarkable optical/electrical features are expected in two-dimensional group-IV monochalcogenides (MXs; M = Sn/Ge and X = S/Se) with a uniquely distorted layered structure. The lone pair electrons in the group-IV atoms are the origin of this structural distortion, while they also cause a strong interlayer force and high chemical reactivity. The fabrication of chemically stable few-to-monolayer MX has been a significant challenge. We have observed that, once the SnS surface is oxidized, the SnOx top layer works as a passivation layer for the SnS layer underneath. In this work, the SnOx/SnS hetero-structure is studied structurally, optically, and electrically. When tape-exfoliated bulk SnS is oxygen-annealed under a reduced pressure at 10 Pa, surface oxidation and SnS sublimation proceed simultaneously, resulting in a monolayer-thick SnS layer with the SnOx passivation layer. The field-effect transistor of nine-layer SnS prepared via mechanical exfoliation exhibits a p-type characteristic because of intrinsic Sn vacancies, whereas ambipolar behavior is observed for the monolayer-thick SnS obtained via oxygen annealing probably owing to the additional n-type doping by S vacancies. This work on monolayer-thick SnS fabrication can be applied to other unstable lone pair analogues and can facilitate future research on MXs.

Graphical abstract: Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation

Back to tab navigation

Supplementary files

Publication details

The article was received on 08 Aug 2018, accepted on 06 Nov 2018 and first published on 07 Nov 2018


Article type: Paper
DOI: 10.1039/C8NR06390G
Citation: Nanoscale, 2018,10, 22474-22483

  •   Request permissions

    Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation

    N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno and K. Nagashio, Nanoscale, 2018, 10, 22474
    DOI: 10.1039/C8NR06390G

Search articles by author

Spotlight

Advertisements