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Serial Hole Transfer Layers for BiVO4 Photoanode with Enhanced Photoelectrochemical Water Splitting

Abstract

In the paper, a high-performance BiVO4 photoanode deposited with serial hole transfer layers was fabricated for photoelectrochemical (PEC) water splitting in order to overcome the shortages of pure BiVO4 electrode in poor charge transport properties and undesirable surface water oxidation kinetics. Hole transfer layer of Fe2O3 was first deposited on the surface of pure BiVO4 to promote the holes transfer from the bulk of semiconductor to electrode surface (bulk/surface transfer process), then hole transfer layer of NiOOH/FeOOH was deposited on their surface to improve the holes transfer from the electrode surface to the electrolyte (surface/electrolyte transfer process). The results showed a remarkable improvement in PEC water splitting performance for the NiOOH/FeOOH/Fe2O3/BiVO4 photoanode. The photocurrent was up to 2.24 mA/cm2 at 1.23 V vs. RHE, which was about 2.95 times than that of pristine BiVO4 photoanode. Meanwhile, the charge transport efficiency in the bulk (ηbulk) and surface (ηsurface) were enhanced by 1.63 and 2.62 times than these of BiVO4 photoanode at 1.23 V vs. RHE, respectively. In addition, the novel photoanode was assembled with commercial Silicon PVC for self-bias PEC water splitting, and a stable photocurrent density of ~2.60 mA/cm2, corresponding to a ~3.2% STH conversion efficiency, was achieved spontaneously. Our study provided a more efficient serial holes transfer strategy for BiVO4 photoanode with enhanced PEC water splitting.

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Publication details

The article was accepted on 03 Sep 2018 and first published on 04 Sep 2018


Article type: Paper
DOI: 10.1039/C8NR06342G
Citation: Nanoscale, 2018, Accepted Manuscript
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    Serial Hole Transfer Layers for BiVO4 Photoanode with Enhanced Photoelectrochemical Water Splitting

    L. Li, J. Li, J. Bai, Q. Zeng, L. Xia, Y. Zhang, S. Chen, Q. Xu and B. Zhou, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR06342G

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