Jump to main content
Jump to site search


Improved Performance of CsPbBr3 Perovskite Light-Emitting Devices by Both Boundary and Interface Defects Passivation

Abstract

Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into the perovskite precursors. The TBAB plays a structure-directing role in the formation of CsPbBr3 film with enlarged crystal size and reduced grain boundaries. Consequently, the reduced nonradiative defects and increased exciton binding energy are responsible for the improvement of the PeLED performance. By employing the TBAB treated interfacial layer, the interface defects are also reduced and results in further promotion in electroluminescence performance of PeLED, including a turn-on voltage of 2.6 V, a brightness of as high as 67300 cd m-2, a current efficiency of 22.5 cd A-1 and an external quantum efficiency of 6.28%. Our results would shed light on the optimization of inorganic PeLEDs by paying attention on the removal of defects both at the grain boundaries and the interfaces between carrier transport layers and perovskite emitting layers.

Back to tab navigation

Supplementary files

Publication details

The article was accepted on 10 Sep 2018 and first published on 11 Sep 2018


Article type: Paper
DOI: 10.1039/C8NR06311G
Citation: Nanoscale, 2018, Accepted Manuscript
  •   Request permissions

    Improved Performance of CsPbBr3 Perovskite Light-Emitting Devices by Both Boundary and Interface Defects Passivation

    L. Song, X. Guo, Y. Hu, Y. Lv, J. Lin, Y. Fan, N. Zhang and X. Liu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR06311G

Search articles by author

Spotlight

Advertisements