Jump to main content
Jump to site search

Issue 38, 2018
Previous Article Next Article

Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation

Author affiliations

Abstract

Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into perovskite precursors. Reduced nonradiative defects primarily passivated by TBAB and increased exciton binding energy are responsible for improvement of PeLED performance. By employing a TBAB-treated interfacial layer, interface defects are reduced and it results in further promotion of electroluminescence performance of PeLED, including turn-on voltage of 2.6 V, brightness as high as 67 300 cd m−2, current efficiency of 22.5 cd A−1 and external quantum efficiency of 6.28%. Our results shed light on optimization of inorganic PeLEDs by focusing on the removal of defects both at the grain boundaries and the interfaces between carrier transport layers and perovskite emitting layers.

Graphical abstract: Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation

Back to tab navigation

Supplementary files

Publication details

The article was received on 06 Aug 2018, accepted on 10 Sep 2018 and first published on 11 Sep 2018


Article type: Paper
DOI: 10.1039/C8NR06311G
Citation: Nanoscale, 2018,10, 18315-18322
  •   Request permissions

    Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation

    L. Song, X. Guo, Y. Hu, Y. Lv, J. Lin, Y. Fan, N. Zhang and X. Liu, Nanoscale, 2018, 10, 18315
    DOI: 10.1039/C8NR06311G

Search articles by author

Spotlight

Advertisements