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Issue 41, 2018
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In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

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Abstract

The dynamical aspects of bipolar resistive switchings have been investigated in Nb/Nb2O5/PtIr nanojunctions. We found that the widely tuneable ON and OFF state resistances are well separated at low bias. On the other hand, the high-bias regime of the resistive switchings coincides with the onset of a high nonlinearity in the current–voltage characteristics, where the impedance of both states rapidly decreases and becomes equivalent around 50 Ω. This phenomenon enables the overriding of the RC limitations of fast switchings between higher resistance ON and OFF states. Consequently, nanosecond switching times between multiple resistance states due to subnanosecond voltage pulses are demonstrated. Moreover, this finding provides the possibility of impedance engineering by the appropriate choice of voltage signals, which facilitates that both the set and reset transitions take place in an impedance matched manner to the surrounding circuit, demonstrating the merits of ultra-fast operation of Nb2O5 based neuromorphic networks.

Graphical abstract: In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

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Article information


Submitted
02 Aug 2018
Accepted
01 Oct 2018
First published
01 Oct 2018

This article is Open Access

Nanoscale, 2018,10, 19290-19296
Article type
Communication

In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

D. Molnár, T. N. Török, B. Sánta, A. Gubicza, A. Magyarkuti, R. Hauert, G. Kiss, A. Halbritter and M. Csontos, Nanoscale, 2018, 10, 19290
DOI: 10.1039/C8NR06226A

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