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In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

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Abstract

The dynamical aspects of bipolar resistive switchings have been investigated in Nb/Nb2O5/PtIr nanojunctions. We found that the widely tuneable ON and OFF state resistances are well separated at low bias. On the other hand, the high-bias regime of the resistive switchings coincides with the onset of a high nonlinearity in the current–voltage characteristics, where the impedance of both states rapidly decreases and becomes equivalent around 50 Ω. This phenomenon enables the overriding of the RC limitations of fast switchings between higher resistance ON and OFF states. Consequently, nanosecond switching times between multiple resistance states due to subnanosecond voltage pulses are demonstrated. Moreover, this finding provides the possibility of impedance engineering by the appropriate choice of voltage signals, which facilitates that both the set and reset transitions take place in an impedance matched manner to the surrounding circuit, demonstrating the merits of ultra-fast operation of Nb2O5 based neuromorphic networks.

Graphical abstract: In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

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Publication details

The article was received on 02 Aug 2018, accepted on 01 Oct 2018 and first published on 01 Oct 2018


Article type: Communication
DOI: 10.1039/C8NR06226A
Citation: Nanoscale, 2018, Advance Article
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    In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

    D. Molnár, T. N. Török, B. Sánta, A. Gubicza, A. Magyarkuti, R. Hauert, G. Kiss, A. Halbritter and M. Csontos, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR06226A

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