Jump to main content
Jump to site search


In situ formed nanoparticle-assisted growth of large-size single crystalline h-BN on copper

Author affiliations

Abstract

h-BN is a widely used ultrathin insulator that can be synthesized in a controllable manner by chemical vapor deposition, similar to the growth of graphene. However, it is challenging to grow large-size single crystalline h-BN because of the ambiguous understanding of its growth mechanism. In this study, we propose a novel in situ formed nanoparticle-assisted growth strategy for large-size single crystalline h-BN growth on conventional polycrystalline copper. We found that the areal nucleation density of h-BN can be suppressed from ∼105 nuclei per mm2 to ∼102 nuclei per mm2 by the in situ formed nanoparticles that were introduced by pre-oxidation. Thus, single crystalline h-BN with lateral length of up to ∼102 μm was readily synthesized. Furthermore, for first time we discovered that the areal nucleation density of h-BN initially decreases and then increases under extreme annealing conditions, indicating that there is a competition-induced limit for suppressing the nucleation of h-BN on copper. This mechanism is universal for h-BN and graphene synthesis, which probably paves the way for large-size graphene/h-BN heterostructures synthesis in the future.

Graphical abstract: In situ formed nanoparticle-assisted growth of large-size single crystalline h-BN on copper

Back to tab navigation

Supplementary files

Publication details

The article was received on 16 Jul 2018, accepted on 03 Sep 2018 and first published on 04 Sep 2018


Article type: Paper
DOI: 10.1039/C8NR05722B
Citation: Nanoscale, 2018, Advance Article
  •   Request permissions

    In situ formed nanoparticle-assisted growth of large-size single crystalline h-BN on copper

    M. Li, S. Zhou, R. Wang, Y. Yu, H. Wong, Z. Luo, H. Li, L. Gan and T. Zhai, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR05722B

Search articles by author

Spotlight

Advertisements