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Improving electrical properties of InAs nanowire field effect transistors by covering Y2O3/HfO2 layers


Quasi-one-dimensional semiconducting materials have drawn increasing attention partly due to their excellent scaling down property in transistors. However, in quasi-one-dimensional nanowires (NWs) transistors, surface and interface properties play very important role mainly due to the large surface-to-volume ratio of NWs and surface scatterings which worsen the carrier mobility. Here, we develop a new method, which is to cover the channel surface by Y2O3/HfO2 layers, to improve the electrical properties of InAs NWs field effect transistors (FETs). In the nine FETs we have successfully fabricated and measured, all the electrical parameters of the devices are improved after depositing Y2O3/HfO2 layers, including on-state current increases, off-state current decreases, transconductance increases, electron mobility increases and subthreshold swing decreases. Comparing the Y2O3/HfO2 covered devices with the FETs fabricated without covering Y2O3 or without annealing, we prove that it is the composed Y2O3/HfO2 layers, instead of only Y2O3 layer or only HfO2 layer, that improve the electrical properties of the FETs. Through Cs-corrected high resolution scanning transmission electron microscopy study we find Y can actually diffuse through the native oxide layer (confirmed to be InOx) and reach to the surface of InAs NWs. Our results indicate the better characteristics of Y2O3 plus the surface passivation by HfO2 improve the electrical properties of the InAs NWs FETs, in which Y2O3 plays an important role to modify and stabilize the interface between InAs NWs and the outside dielectric layer. Our methods should also be applicable to other III-V materials.

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Publication details

The article was received on 14 Jul 2018, accepted on 09 Aug 2018 and first published on 10 Aug 2018

Article type: Paper
DOI: 10.1039/C8NR05680C
Citation: Nanoscale, 2018, Accepted Manuscript
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    Improving electrical properties of InAs nanowire field effect transistors by covering Y2O3/HfO2 layers

    T. Li, R. Shen, M. Sun, D. Pan, J. Zhang, J. Xu, J. Zhao and Q. Chen, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR05680C

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