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Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires

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Abstract

Core–shell nanowires (NWs) composed of silicon and germanium can be used to realize high electron (hole) mobility transistors (HEMTs) by suppressing impurity scattering due to their band offset structure and selective doping. Boron doped p-type Si/intrinsic-Ge (i-Ge) core–shell NW structures are selected to study this phenomenon. To produce HEMT devices, hole gas accumulation must be controlled in the impurity undoped i-Ge shell layers. Spectral change in the Ge optical phonon is detected with increased B doping in p-Si core NWs, showing hole gas accumulation in this system. We also fabricate p-Si/i-Ge/p-Si core–double shell NWs to more clearly demonstrate hole gas accumulation in the i-Ge layers.

Graphical abstract: Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires

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Publication details

The article was received on 11 Jul 2018, accepted on 25 Aug 2018 and first published on 28 Aug 2018


Article type: Paper
DOI: 10.1039/C8NR05590D
Citation: Nanoscale, 2018, Advance Article
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    Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires

    X. Zhang, W. Jevasuwan, K. C. Pradel, T. Subramani, T. Takei and N. Fukata, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR05590D

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