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Issue 34, 2018
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Penta-Pt2N4: an ideal two-dimensional material for nanoelectronics

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Since the discovery of graphene, two-dimensional (2D) materials have paved new ways to design high-performance nanoelectronic devices. To facilitate applications of such devices, there are three key requirements that a material needs to fulfill: sizeable band gap, high carrier mobility, and robust environmental stability. However, among the most popular 2D materials studied in recent years, graphene is gapless, hexagonal boron nitride has a very large band gap, transition metal dichalcogenides have low carrier mobility, and black phosphorene is ambience-sensitive. Thus far, these three characteristics could seldom be satisfied by only a single material. Therefore, it is a great challenge to find an ideal 2D material that can overcome these limitations. In this study, we theoretically predicted a novel planar 2D material penta-Pt2N4, which was designed using the Cairo pentagonal tiling as well as the rare nitrogen double bonds. Most significantly, 2D penta-Pt2N4 exhibits excellent intrinsic properties, including large direct band gap (up to 1.51 eV), high carrier mobility (up to 105 cm2·V−1·s−1), very high Young's modulus (up to 0.70 TPa), and robust dynamic, thermal, and ambient stabilities. Moreover, penta-Pt2N4 is the global minimum structure among 2D materials with PtN2 stoichiometry. We also propose a CVD/MBE scheme to enable its experimental synthesis. We envision that 2D penta-Pt2N4 may find wide applications in the field of nanoelectronics.

Graphical abstract: Penta-Pt2N4: an ideal two-dimensional material for nanoelectronics

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Publication details

The article was received on 10 Jul 2018, accepted on 07 Aug 2018 and first published on 07 Aug 2018

Article type: Paper
DOI: 10.1039/C8NR05561K
Citation: Nanoscale, 2018,10, 16169-16177

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    Penta-Pt2N4: an ideal two-dimensional material for nanoelectronics

    Z. Liu, H. Wang, J. Sun, R. Sun, Z. F. Wang and J. Yang, Nanoscale, 2018, 10, 16169
    DOI: 10.1039/C8NR05561K

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