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Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

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Abstract

Integrating two-dimensional (2D) materials with ferroelectric thin films may result in unique characteristics and novel applications due to the coupling between their intrinsic characters. Here, we observed the ferroelectric resistive switching behavior in both graphene/BFO and MoS2/BFO heterojunctions, which stems from the modulation of contact barriers and depletion width at the hetero-interface induced by the ferroelectric polarization. Besides, the ferroelectric resistive switching behavior in both graphene/BFO and MoS2/BFO depends on the thicknesses of the corresponding 2D materials, because the thickness-dependent work function or conductivity of 2D materials could change the contact barrier heights and widths at the interface of 2D materials and ferroelectrics. Our results will widen the memristive applications of 2D/ferroelectrics hetero-junctions and provide a pathway for the novel memory devices based on hetero-structures with 2D/3D materials in the future.

Graphical abstract: Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

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Publication details

The article was received on 05 Jul 2018, accepted on 11 Nov 2018 and first published on 12 Nov 2018


Article type: Paper
DOI: 10.1039/C8NR05408H
Citation: Nanoscale, 2018, Advance Article
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    Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

    Y. Li, X. Sun, C. Xu, J. Cao, Z. Sun and L. Zhen, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR05408H

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