Issue 40, 2018

Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors


Graphene–silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10s–100s of kHz for wavelength λ >500 nm. Here, we demonstrate GS Schottky junction photodetectors fabricated on a silicon-on-insulator substrate (SOI) with response speeds approaching 1 GHz, attributed to the reduction of the photo-active silicon layer thickness to 10 μm and with it a suppression of speed-limiting diffusion currents. Graphene–silicon-on-insulator photodetectors (GSOI-PDs) exhibit a negligible influence of wavelength on response speed and only a modest compromise in responsivities compared to GS junctions fabricated on bulk silicon. Noise-equivalent-power (NEP) and specific detectivity (D*) of GSOI photodetectors are 14.5 pW and 7.83 × 1010 cm Hz1/2 W−1, respectively, in ambient conditions. We further demonstrate that combining GSOI-PDs with micro-optical elements formed by modifying the surface topography enables engineering of the spectral and angular response.

Graphical abstract: Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors

Supplementary files

Article information

Article type
30 Jun 2018
01 Oct 2018
First published
02 Oct 2018

Nanoscale, 2018,10, 18926-18935

Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors

H. Selvi, E. W. Hill, P. Parkinson and T. J. Echtermeyer, Nanoscale, 2018, 10, 18926 DOI: 10.1039/C8NR05285A

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