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Ultra-high performance flexible piezopotential gated In1-xSnxSe phototransistor

Abstract

Flexible optoelectronic devices facilitated by piezotronic effect is desperately essential in the near future for their potential application in many different field spanning from solid state lighting to biomedical usage. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties is essential for the realization of nanopiezotronics and piezo-phototronics. Here, we report the first attempt of the demonstration of the piezo-phototronic property observed in In1-xSnxSe flexible devices by applying systematic mechanical strain under photoexcitation. Quite interestingly, we discover that the dark and photocurrent is increased by 5-fold under bending strain of 2.7 % with a maximum photoresponsivity of 1037 A W-1. In addition, the device enables to act as a strain sensor showcasing the value of strain sensitivity up to 206. All these values outperform the same class of devices based on two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be well interpreted in terms of piezoelectric potential gating for the device to perform like a phototransistor. The strain induced gate voltage assists an efficient separation of photogenerated charge carriers as well as enhances the mobility of In1-xSnxSe manifesting a high performance on a freeform surface. Thus, our studied multifunctional device is very useful for the development of a variety of advanced applications to circumvent the requisite demand of emerging technologies.

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Publication details

The article was received on 28 Jun 2018, accepted on 13 Sep 2018 and first published on 14 Sep 2018


Article type: Paper
DOI: 10.1039/C8NR05234D
Citation: Nanoscale, 2018, Accepted Manuscript
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    Ultra-high performance flexible piezopotential gated In1-xSnxSe phototransistor

    C. R. Paul Inbaraj, R. J. Mathew, G. Haider, T. Chen, R. K. Ulaganathan, R. Sankar, K. P. Bera, Y. Liao, M. Kataria, H. Lin, F. Chou, Y. Chen, C. Lee and Y. Chen, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR05234D

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