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Issue 33, 2018
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Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

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Abstract

Selectorless graphite-based resistive random-access memory (RRAM) has been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without an additional selector or transistor for low-power RRAM array application. The low effective dielectric constant value (k) layer of graphite or graphite oxide is utilized, which is beneficial in suppressing sneak-path currents in the crossbar RRAM array. The tail-bits with low nonlinearity can be manipulated by the positive voltage pulse, which in turn can alleviate variability and reliability issues. Our results provide additional insights for built-in nonlinearity in 1R-only selectorless RRAMs, which are applicable to the low-power memory array, ultrahigh density storage, and in-memory neuromorphic computational configurations.

Graphical abstract: Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

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Publication details

The article was received on 11 Jun 2018, accepted on 11 Jul 2018 and first published on 13 Jul 2018


Article type: Paper
DOI: 10.1039/C8NR04766A
Citation: Nanoscale, 2018,10, 15608-15614
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    Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

    Y. Chen, S. Hu, C. Lin, B. Fowler, H. Huang, C. Lin, S. Kim, Y. Chang and J. C. Lee, Nanoscale, 2018, 10, 15608
    DOI: 10.1039/C8NR04766A

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