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Anti-Stokes Raman scattering in mono- and bilayer graphenes


The anti-Stokes Raman spectroscopy associated with the intervalley double resonance process in carbon materials is an unique technique to reveal its characteristic electronic band structures and phonon dispersion relation. In graphene, the dominant resonant behavior for its 2D mode is an intervalley triple resonance Raman process. In this paper, we report the anti-Stokes Raman scattering of the 2D mode in pristine graphene. The excitation-energy (Eex) dependent frequency discrepancy between anti-Stokes and Stokes components of the 2D mode (Δω(2D)) is observed, which is in good agreement with the theoretical results. This is attributed to the nonlinear dispersion of in-plane transverse optical (iTO) phonon branch near the K point, confirmed by the nonlinear $E_{ex}$-dependent frequency of the 2D mode (ω(2D)) in the range of 1.58~3.81 eV. The wavevector-dependent phonon group velocity of the iTO phonon branch is directly derived from Δω(2D). The ant-Stokes Raman scattering of the D mode in defected graphene and the 2D mode in bilayer graphene associated with intervalley double resonance Raman processes are also reported.

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Publication details

The article was received on 05 Jun 2018, accepted on 27 Jul 2018 and first published on 30 Jul 2018

Article type: Paper
DOI: 10.1039/C8NR04554B
Citation: Nanoscale, 2018, Accepted Manuscript
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    Anti-Stokes Raman scattering in mono- and bilayer graphenes

    X. Cong, J. Wu, M. Lin, X. Liu, W. Shi, P. Venezuela and P. TAN, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR04554B

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