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Reversible resistive switching behaviour in CVD grown, large area MoOx

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Abstract

Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it anywhere from a wide bandgap semiconductor to a semi-metal. Successful integration of such a planar metal oxide into resistive memory can enable adaptive and low power memory applications. Here, we investigate the non-volatile and reversible resistive switching behaviour of oxygen deficient MoOx in a cross-point metal/insulator/metal (MIM) architecture. Layered MoOx films are synthesised using chemical vapour deposition (CVD) and reveal excellent resistive switching performance with relatively low electroforming and operating voltages. Switching ratios of ∼103 and stable data retention of >104 s are achieved. As such, this work demonstrates the viability of MoOx as a resistive memory element and paves the way for future two-dimensional resistive memory technologies.

Graphical abstract: Reversible resistive switching behaviour in CVD grown, large area MoOx

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Publication details

The article was received on 31 May 2018, accepted on 05 Aug 2018 and first published on 07 Aug 2018


Article type: Paper
DOI: 10.1039/C8NR04407D
Citation: Nanoscale, 2018, Advance Article
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    Reversible resistive switching behaviour in CVD grown, large area MoOx

    F. Rahman, T. Ahmed, S. Walia, E. Mayes, S. Sriram, M. Bhaskaran and S. Balendhran, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR04407D

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