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Significantly Enhanced Magnetoresistance in Monolayer WTe2 via Heterojunction Engineering: A First-principles Study

Abstract

The large non-saturating magnetoresistance (MR) of bulk WTe2 is known to be greatly reduced in thin film with decreasing thickness. In this study, based on first-principles calculations, we demonstrate that 2D WTe2 bonded to graphene, through a WTe2/graphene van der Waals (vdW) heterojunction, can exhibit a significantly enhanced MR, which can be even larger than that of bulk WTe2. Moreover, the MR shows a strong stacking-configuration-dependent behavior, which facilitates a tunable MR effect. Our findings illustrate a new route to enhancing the MR of WTe2 and other 2D semimetals via heterojunction engineering, which is useful for a range of applications in information technology.

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Publication details

The article was received on 30 May 2018, accepted on 02 Nov 2018 and first published on 02 Nov 2018


Article type: Paper
DOI: 10.1039/C8NR04391D
Citation: Nanoscale, 2018, Accepted Manuscript
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    Significantly Enhanced Magnetoresistance in Monolayer WTe2 via Heterojunction Engineering: A First-principles Study

    L. Hu, L. Kang, J. Yang, B. Huang and F. Liu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR04391D

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