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Issue 35, 2018
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Strain-engineering tunable electron mobility of monolayer IV–V group compounds

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Abstract

First-principles simulations demonstrate the anisotropic and high mobility in the new group monolayer IV–V semiconductors. The strain-engineered bandstructure reveals the conduction bands are sensitive to armchair-direction deformation. By applying strains, the electrical transportation in the armchair direction can be further improved or deteriorated. We use this important feature to achieve the tunable electron mobility in monolayer IV–V semiconductors. The controllable introduction of strain into semiconductors offers an important degree of flexibility in electrical transportation. Meanwhile, our works leads to a new approaches for research on mobility control in two-dimensional semiconductors. These will be useful for novel mechanical-electronic devices related to mobility switching.

Graphical abstract: Strain-engineering tunable electron mobility of monolayer IV–V group compounds

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Publication details

The article was received on 23 May 2018, accepted on 08 Aug 2018 and first published on 09 Aug 2018


Article type: Paper
DOI: 10.1039/C8NR04186E
Citation: Nanoscale, 2018,10, 16750-16758
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    Strain-engineering tunable electron mobility of monolayer IV–V group compounds

    W. Zhang, J. Yin, Y. Ding, Y. Jiang and P. Zhang, Nanoscale, 2018, 10, 16750
    DOI: 10.1039/C8NR04186E

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