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Low-voltage and high-performance field-effect transistors based on ZnxSn1-xO nanofibers with ZrOx dielectric

Abstract

One-dimensional (1D) nanofibers have been considered as important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composition ratios were fabricated by electrospinning. The surface morphologies, crystallinities, grain size distributions, and chemical composition of the nanofibers were investigated. Meanwhile, the field-effect transistors (FETs) based on ZnSnO nanofiber networks (NFNs) with various composition ratios were integrated and investigated. For the optimized Zn0.3Sn0.7O NFNs FETs, the device based on SiO2 dielectric exhibited high electrical performance, including a high on/off current ratio (Ion/off) of 2×107 and a field-effect mobility (μFE) of 0.17 cm2 V-1 s-1. When high-permittivity (ᴋ) ZrOx thin film was employed as dielectric in Zn0.3Sn0.7O NFNs FETs, the operating voltage was substantially reduced and the high μFE of 7.8 cm2 V-1 s-1 was achieved. These results indicate that the Zn0.3Sn0.7O NFNs/ZrOx FETs exhibit great potency in low-cost and low-voltage devices.

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Publication details

The article was received on 14 May 2018, accepted on 09 Jul 2018 and first published on 10 Jul 2018


Article type: Paper
DOI: 10.1039/C8NR03887B
Citation: Nanoscale, 2018, Accepted Manuscript
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    Low-voltage and high-performance field-effect transistors based on ZnxSn1-xO nanofibers with ZrOx dielectric

    Z. Wang, Y. Meng, Y. Cui, C. Fan, G. Liu, B. Shin, F. Dejun and F. Shan, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR03887B

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