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Stretchable Thin-Film Transistors with Molybdenum Disulfide Channel and Graphene Electrodes

Abstract

Two-dimensional (2D) materials including graphene and transition metal dichalcogenides (TMDCs) have attracted great interest as new electronic materials, given their superior properties such as optical transparency, mechanical flexibility, and stretchability, especially for application to next-generation displays. Particularly, the integration of graphene and TMDCs enables the implementation of 2D materials-based thin-film transistors (TFTs) for stretchable displays, given that TFTs are the fundamental element of various modern devices. In the present study, we demonstrate chemical-vapor-deposited molybdenum disulfide and graphene-based TFTs on a polymer substrate and investigate the electrical characteristics of TFTs under mechanical deformation to determine the stretchability of our devices. Furthermore, the mechanisms leading to TFT performance degradation are investigated, as they relate to the change in the contact resistance that is closely associated with the relative deformation of 2D materials under mechanical stress. Therefore, the synergetic integration of 2D materials with versatile electrical properties provides an important strategy for creating 2D material-based stretchable TFTs, thus extending the excellent potential of 2D materials as innovative materials for stretchable active-matrix displays.

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Supplementary files

Publication details

The article was received on 18 Apr 2018, accepted on 05 Aug 2018 and first published on 06 Aug 2018


Article type: Paper
DOI: 10.1039/C8NR03173H
Citation: Nanoscale, 2018, Accepted Manuscript
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    Stretchable Thin-Film Transistors with Molybdenum Disulfide Channel and Graphene Electrodes

    I. Park, T. I. Kim, S. Kang, G. W. Shim, Y. Woo, T. Kim and S. Choi, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR03173H

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