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Scalable faceted voids with luminescence enhanced edges in WS2 monolayers

Abstract

Scalable approach is the much needed part in the formation of atomically flat edges with specific terminations to enhance the local properties for optoelectronics, nanophotonics and energy applications. We demonstrate point defect clustering driven, faceted void formations with luminescent enhanced edges in WS2 monolayer during large scale CVD growth and controlled annealing. With the aid of aberration-corrected scanning transmission electron microscope (AC-STEM) high angle annular dark field (HAADF) imaging, we probed the atomic terminations of S and W to explain the observed luminescent enhancement in alternate edges Faceted void formation in monolayer WS2 is found to be sensitive to annealing temperature, time, gas environment and precursor supply. Our observation of areal coverage evolution over time revealed the competition between monolayer WS2 growth and void formation at 850o C. While the initial stage is dominated by the monolayer growth, the defect generation and void growth dominate at later stages and provide optimum processing window for monolayer WS2 as well as faceted void growth. Growth of faceted voids not only follow the geometry of monolayer facets but also show similar atomic terminations at the edges and thus enables local manipulation of photoluminescence enhancement with an order of magnitude increase in intensity. The developed CVD processing enables multi-fold increase in the luminescent active edge length through creation of faceted voids within the WS2 monolayer.

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Publication details

The article was received on 18 Mar 2018, accepted on 07 Aug 2018 and first published on 08 Aug 2018


Article type: Paper
DOI: 10.1039/C8NR02246A
Citation: Nanoscale, 2018, Accepted Manuscript
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    Scalable faceted voids with luminescence enhanced edges in WS2 monolayers

    P. Kumar, D. Chatterjee, T. Maeda, A. Roy, K. Kaneko and V. Balakrishnan, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR02246A

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