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Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

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Abstract

Single CdS nanobelt-based photodetectors are strongly dependent on bias and temperature. They not only show a strong photoresponse to close bandgap energy light with ultrahigh responsivity of approximately 107 A W−1, large photo-to-dark current ratio of 104, photoconductive gain of 107, and fast response and recovery speed at a large bias of 20 V, but can also show a weak photoresponse to above- and below-bandgap energy light. Moreover, their spectral response range can show tunable selectivity to above- and below-bandgap light, which can be accurately controlled by temperature and bias. More importantly, the modulated spectral response characteristics show excellent memory behaviour after reversible writing and erasing by using temperature and bias. In nanostructures, abundant surface states and stacking fault-related traps play a vital role in the ultrahigh photoresponse to bandgap light and the erasable memory effect on spectral response range selectivity. Given the erasable memory of the spectral response selectivity with excellent photoconduction performance, the CdS NBs possess important applications in new-generation photodetection and photomemory devices.

Graphical abstract: Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

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Publication details

The article was received on 11 Jul 2018, accepted on 31 Aug 2018 and first published on 31 Aug 2018


Article type: Communication
DOI: 10.1039/C8NH00182K
Citation: Nanoscale Horiz., 2018, Advance Article
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    Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

    T. Tong, S. Wang, J. Zhao, B. Cheng, Y. Xiao and S. Lei, Nanoscale Horiz., 2018, Advance Article , DOI: 10.1039/C8NH00182K

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