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Doping Engineering and Functionalization of Two Dimensional Metal Chalcogenides

Abstract

Two-dimensional (2D) layered metal chalcogenides (MXs) have the wealthy potential in achieving flexible transistors, optoelectronics, sensing and memories beyond the state-of-art technology. To pursue an ultimate performance, precisely controlled doping engineering to 2D MXs is desired to tailor their physical and chemical properites in function devices. In this review, we highlight the recent progresses in doping engineering of 2D MXs, covering that enabled by substitutioanl, exterior charge transfer, intercalation and electrostatic doping mechanism. A variety of novel doping engieneering examples forming Janus structure, defect curing effects, zerovalent intercalation and delibrately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for fuctionalizing MXs will be provided to facilitate ongoing research in this field toward multifuncitoned applications.

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Publication details

The article was accepted on 02 Aug 2018 and first published on 02 Aug 2018


Article type: Review Article
DOI: 10.1039/C8NH00150B
Citation: Nanoscale Horiz., 2018, Accepted Manuscript
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    Doping Engineering and Functionalization of Two Dimensional Metal Chalcogenides

    P. Luo, F. Zhuge, Q. Zhang, Y. Chen, L. Lv, Y. Huang, H. Li and T. Zhai, Nanoscale Horiz., 2018, Accepted Manuscript , DOI: 10.1039/C8NH00150B

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