Jump to main content
Jump to site search


Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

Author affiliations

Abstract

Near-infrared light-emitting diodes (LEDs) show potential for telecommunication and medical applications. Quantum dot nanocrystals (QDs), specifically lead chalcogenides, are candidate LED materials since they exhibit tuneable luminescence across the whole near-infrared region, but their surface structure must be carefully controlled to achieve efficient emission. We demonstrate an efficient donor–acceptor QD system by embedding low-energy QDs with high photoluminescence quantum efficiency (PLQE) into a matrix of higher-energy QDs with lower PLQE. We find that the overall PLQE of densely packed cross-linked QD films can be improved by the incorporation of a relatively small fraction of well-passivated acceptor QDs, also leading to improved LED performance. Excitations are transferred into the isolated low-energy acceptor QDs, where they recombine with high radiative efficiency.

Graphical abstract: Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

Back to tab navigation

Supplementary files

Publication details

The article was received on 11 Sep 2018, accepted on 03 Oct 2018 and first published on 09 Oct 2018


Article type: Communication
DOI: 10.1039/C8MH01122B
Citation: Mater. Horiz., 2018, Advance Article
  •   Request permissions

    Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

    Nathaniel. J. L. K. Davis, J. R. Allardice, J. Xiao, A. Karani, T. C. Jellicoe, A. Rao and N. C. Greenham, Mater. Horiz., 2018, Advance Article , DOI: 10.1039/C8MH01122B

Search articles by author

Spotlight

Advertisements