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Chemically addressed switching measurements in graphene electrode memristive devices using in-situ XPS


The memristor has been the topic of heated research activity since the Platinum/TiO2/TiOx/Platinum structure was reported by Hewlett-Packard Labs. The characteristics of memristors such as the pinched hysteresis loops and time and input signal dependent memristance are due to the drift of positively charged oxygen vacancies in the TiOx layer. While different modes of switching behaviour have been characterized, observing the switching as it happens with in-situ measurements using X-Ray Photoelectron Spectroscopy (XPS) can allow a better understanding of the device operation. The set up used in this work enables applying voltage signals of different frequencies and amplitudes and observing the hysteresis seen in the I-V plane through chemical addressing. The measurements are conducted on Platinum/TiO2/TiOx/Graphene structures. The single layer Graphene, utilized as a top electrode, effectively acts as a transparent electrode in that the layer beneath it can be observed to a depth of ~10nm in XPS. This allows for the observation of the changes in the binding energies of C1s, Ti2p and O1s. By comparing the variation in the binding energy of Ti2p to that of C1s and observing how the variation changes for different excitation signals (at different frequency and amplitudes) it is possible to inspect the effect of the oxygen vacancy drift. We employed a variety of input signals with varying frequency and amplitudes in order to test the memristive devices thoroughly: sine wave, triangular wave and DC bias. Graphene has been attracting attention due to its intriguing optoelectronic properties. This study utilizes graphene as a transparent top electrode for in-situ measurements in XPS to observe chemically-addressed memristive hysteresis while an excitation signal is being applied to the device.

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Publication details

The article was received on 19 Jul 2018, accepted on 06 Aug 2018 and first published on 06 Aug 2018

Article type: Paper
DOI: 10.1039/C8FD00129D
Citation: Faraday Discuss., 2018, Accepted Manuscript
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    Chemically addressed switching measurements in graphene electrode memristive devices using in-situ XPS

    I. Koymen, P. Aydogan Gokturk, C. Kocabas and S. Suzer, Faraday Discuss., 2018, Accepted Manuscript , DOI: 10.1039/C8FD00129D

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