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Electrochemically prepared oxides for resistive switching memories

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Abstract

Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.

Graphical abstract: Electrochemically prepared oxides for resistive switching memories

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Publication details

The article was received on 01 Jun 2018, accepted on 18 Jun 2018 and first published on 18 Jun 2018


Article type: Paper
DOI: 10.1039/C8FD00112J
Citation: Faraday Discuss., 2018, Advance Article
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    Electrochemically prepared oxides for resistive switching memories

    A. Zaffora, F. Di Quarto, H. Habazaki, I. Valov and M. Santamaria, Faraday Discuss., 2018, Advance Article , DOI: 10.1039/C8FD00112J

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